High Electron Mobility Transistor (HEMT): IISc builds component for charging e-vehicles
buzzword now. But
Scientists at the
The HEMT is the first of its kind in the country made from gallium nitride (GaN) which is useful in electric cars.
“The majority of electronics inside the electric vehicle are power electronics. The electronics which control the wheels and brakes are all power electronics. In older times, the power switch and
HEMTs made of GaN provide an edge over silicon-based transistors as they allow the systems to operate at very high voltage, switch ON and
We have been working on this for the last 10 years now. Over the years our specs matured, because internationally there have been many developments in this field. I would say at present we are on par with the best available internationally
— Prof Mayank Shrivastava, IISc
“We have been working on this for the last 10 years now. Our target has always been to make the best. When we started, of course the specifications (specs) were different. Over the years our specs also matured, because internationally there have been many developments in this field. I would say at present we are on par with the best available internationally,” said Prof Shrivastava.
“There are two advantages if the size of the power electronics system is reduced. In an e-scooter for example, around 20 per cent of the scooter’s weight is power electronics. Now if that 20 per cent reduces to 10 per cent, the per charge number of kilometres will increase by 10 per cent because per charge number of kilometres in an electric vehicle is a function of the overall weight. Secondly, if the size goes down, then you are also saving on cost and power too. And that includes all the greenhouse related aspects as well,” he added.
The Department of Science & Technology (DST) which is supporting this project said that this device will now be taken up for prototype development and for field-testing.
According to the Department, the projected overall power device market was set to cross the USD 18 billion mark by 2020, out of which the market for HEMTs was projected to cross the USD 5 billion.
“So, GaN HEMTs will acquire a major share of the power device market. With a growing market for electric vehicles in India, such an indigenous development can make India self-reliant for transistor technology,” the department said.